, lj ne. 20 stern ave. springfield, new jersey 07081 u.s.a. m j13333 silicon npn power transistor description ? collector-emitter sustaining voltage- : vceo(sus) = 400v(min) ? high switching speed telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switchmode applications. ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25*c) symbol vcev vceo vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation@tc=25'c junction temperature storage temperature value 700 400 6 20 30 10 15 175 200 -65-200 unit v v v a a a a w "c 'c thermal characteristics symbol rth j-c parameter thermal resistance,junction to case max 1.0 unit c/w v?'^i )*j ^xifcex ^^fr 3 j pin 1.base 1 if 2. emitter ^s 3. collector (case) 2 to-3 package i te p* f 1 i i ?l i c i t jl-da?. u* rl-q /^ i-4n/ ' &7$--<8 < ' nvn dw mm a 39' b 25? q 9.30 0 0.90 i 2.m iux 00 ai?y 11.10 1.10 3,10 g 10.92 h 140 k 1149 i 16.75 n 13.40 0 ?.00 u 300) v 4.30 1350 1705 19b2 4 .20 3020 420 : f ; b > | nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
m j13333 silicon npn power transistor electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-! vce(sat)-2 vse(sat) icev icer iebo hfe fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current gain-bandwidth product output capacitance conditions lc=100ma;lb=0 ic=10a;ib=2a ic=10a;ib=2a,tc=100'c lc= 20a; ib=6.7a ic=10a;ib=2a lc=10a;lb=2a,tc=10 %l iu h 5, duty cycle^2.0% 0.02 0.3 1.6 0.3 0.1 0.7 4.0 0.7 us u s u s w s
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